SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.8 A @ P Channel
• Power Dissipation: 1150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3552DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0.1
0
0
V
2
1
GS
10
= 10 V thru 7 V
-4
V
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
GS
1
On-Resistance vs. Drain Current
= 4.5 V
1
V
DS
Output Characteristics
Single Pulse
2
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
2
3
2 V
10
-3
4
3
V
Normalized Thermal Transient Impedance, Junction-to-Foot
GS
6 V
= 10 V
5
5 V
4 V
3 V
4
6
Square Wave Pulse Duration (s)
10
5
7
-2
300
240
180
120
10
60
8
6
4
2
0
0
-1
0
0
C
rss
1
V
V
6
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
2
Capacitance
12
1
C
iss
Vishay Siliconix
3
25 °C
T
18
C
Si3552DV
= - 55 °C
4
www.vishay.com
24
5
125 °C
10
30
6
5