SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 5
![MOSFET N/P-CH 30V 2.5/1.8A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0.1
0
0
V
2
1
GS
10
= 10 V thru 7 V
-4
V
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
GS
1
On-Resistance vs. Drain Current
= 4.5 V
1
V
DS
Output Characteristics
Single Pulse
2
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
2
3
2 V
10
-3
4
3
V
Normalized Thermal Transient Impedance, Junction-to-Foot
GS
6 V
= 10 V
5
5 V
4 V
3 V
4
6
Square Wave Pulse Duration (s)
10
5
7
-2
300
240
180
120
10
60
8
6
4
2
0
0
-1
0
0
C
rss
1
V
V
6
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
2
Capacitance
12
1
C
iss
Vishay Siliconix
3
25 °C
T
18
C
Si3552DV
= - 55 °C
4
www.vishay.com
24
5
125 °C
10
30
6
5