SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 6
![MOSFET N/P-CH 30V 2.5/1.8A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Si3552DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
10
10
8
6
4
2
0
1
- 50
0.00
0
Source-Drain Diode Forward Voltage
- 25
V
I
D
DS
= 1.8 A
T
= 15 V
0.3
V
1
J
SD
= 150 °C
0
Q
- Source-to-Drain Voltage (V)
I
g
D
Threshold Voltage
T
- Total Gate Charge (nC)
= 250 µA
J
25
- Temperature (°C)
Gate Charge
0.6
2
50
0.9
3
T
75
J
= 25 °C
100
1.2
4
125
1.5
150
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
- 50
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 1.8 A
I
D
2
= 10 V
V
T
= 1 A
GS
J
0
0.1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
5
Time (s)
4
I
D
S09-2110-Rev. C, 12-Oct-09
50
= 1.8 A
Document Number: 70971
1
6
75
100
8
125
10
150
10
30