SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.8 A @ P Channel
• Power Dissipation: 1150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3552DV-T1-E3TR

Si3552DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
10
10
8
6
4
2
0
1
- 50
0.00
0
Source-Drain Diode Forward Voltage
- 25
V
I
D
DS
= 1.8 A
T
= 15 V
0.3
V
1
J
SD
= 150 °C
0
Q
- Source-to-Drain Voltage (V)
I
g
D
Threshold Voltage
T
- Total Gate Charge (nC)
= 250 µA
J
25
- Temperature (°C)
Gate Charge
0.6
2
50
0.9
3
T
75
J
= 25 °C
100
1.2
4
125
1.5
150
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
- 50
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 1.8 A
I
D
2
= 10 V
V
T
= 1 A
GS
J
0
0.1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
5
Time (s)
4
I
D
S09-2110-Rev. C, 12-Oct-09
50
= 1.8 A
Document Number: 70971
1
6
75
100
8
125
10
150
10
30