FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 3

MOSFET N/P-CH DUAL 30V 8SOIC

FDS8962C

Manufacturer Part Number
FDS8962C
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS8962C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A, - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8962C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8962C
Manufacturer:
FSC
Quantity:
1 580
Part Number:
FDS8962C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 639
FDS8962C Rev. A1
Electrical Characteristics
Notes:
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Symbol
S
rr
SD
R
rr
θJA
θJC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
a) 78°/W when mounted
Parameter
on a 0.5 in
copper
θCA
2
is determined by the user's board design.
pad of 2 oz
T
A
= 25°C unless otherwise noted
V
V
Q1
I
Q2
I
F
F
GS
GS
= 7 A, d
= -5 A, d
= 0 V, I
= 0 V, I
Test Conditions
iF
iF
S
S
/d
/d
= 1.3 A
= -1.3 A
t
t
= 100 A/µs
= 100 A/µs
3
b) 125°/W when mounted
on a .02 in
copper
(Note 2)
(Note 2)
2
pad of 2 oz
(Continued)
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
-0.88
Typ
0.75
19
19
9
6
c) 135°/W when mounted
on a minimum pad.
Max
-1.3
-1.2
1.3
1.2
www.fairchildsemi.com
Units
nS
nC
A
V

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