FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 7

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

FDS8962C Rev. A1
Typical Characteristics: Q2 (P-Channel)
0.01
100
0.1
10
10
8
6
4
2
0
1
0.1
0
Figure 19. Maximum Safe Operating Area.
Figure 17. Gate Charge Characteristics.
R
SINGLE PULSE
I
R
D
0.001
DS(ON)
θ JA
0.01
= -5A
V
T
0.1
GS
A
0.0001
= 125°C/W
1
= 25°C
= -10V
LIMIT
2
-V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
0.2
, GATE CHARGE (nC)
0.1
0.05
4
0.02
0.001
DC
0.01
10s
SINGLE PULSE
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
6
V
10ms
DS
Figure 21. Transient Thermal Response Curve.
10
= -5V
1ms
0.01
8
100µs
-15V
-10V
100
10
0.1
7
t
1
, TIME (sec)
800
700
600
500
400
300
200
100
50
40
30
20
10
0
0.001
0
0
Figure 18. Capacitance Characteristics.
C
rss
1
Figure 20. Single Pulse Maximum
0.01
5
C
-V
oss
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
1
, TIME (sec)
15
1
C
P(pk)
Duty Cycle, D = t
iss
T
R
J
R
10
θ JA
20
- T
100
θ JA
(t) = r(t) * R
A
t
= 135°C/W
1
= P * R
t
SINGLE PULSE
R
2
f = 1 MHz
V
θ JA
GS
T
100
A
= 125°C/W
25
= 0 V
= 25°C
θ JA
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θ JA
1
(t)
/ t
2
1000
1000
30