FDS8962C Fairchild Semiconductor, FDS8962C Datasheet - Page 6

• Manufacturer Part Number: FDS8962C
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8962C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8962C

FDS8962C Rev. A1
Typical Characteristics: Q2 (P-Channel)
1.6
1.4
1.2
0.8
0.6
30
20
10
15
12
0
9
6
3
0
1
-50
0
1
V
Figure 13. On-Resistance Variation with
V
GS
I
Figure 11. On-Region Characteristics.
D
GS
Figure 15. Transfer Characteristics.
V
= -5A
= -10V
-25
DS
= -10V
1.5
= -5V
1
-V
-V
DS
T
0
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
, GATE TO SOURCE VOLTAGE (V)
-6.0V
2
Temperature.
25
2.5
-5.0V
50
3
3
-4.5V
75
T
A
4
= -55
3.5
-4.0V
100
o
C
-3.5V
-3.0V
125
5
125
4
o
C
25
o
C
150
4.5
6
6
0.0001
0.001
Figure 16. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.01
100
0.2
0.1
0.1
1.8
1.6
1.4
1.2
0.8
10
0
1
2
1
0
2
0
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
with Source Current and Temperature.
T
A
V
V
= 25°C
GS
Drain Current and Gate Voltage.
GS
0.2
-V
=-4.0V
=0V
SD
6
-V
-4.5V
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
4
A
0.4
, GATE TO SOURCE VOLTAGE (V)
= 125
-I
-5.0V
T
D
A
, DRAIN CURRENT (A)
= 125°C
o
C
-6.0V
12
0.6
25
-7.0V
6
o
C
0.8
18
-55
-8.0V
o
C
1
8
24
I
-10V
D
1.2
= -2.5A
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1.4
30
10