FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet
FDS6900AS
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FDS6900AS Summary of contents
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... FDS6900AS Dual N-Ch PowerTrench General Description The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...
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... Referenced to 25° 8 8 125° 125° 1.0 MHz Ω 10V GEN Ω 4 GEN mV/° µA Q2 500 Q1 1 ±100 1 1.9 3 mV/°C Q2 –3.2 Q1 –4 mΩ 570 pF Q1 600 Q2 180 pF Q1 150 Ω Q2 2.8 4.9 Q1 2.2 3 FDS6900AS Rev B (X) ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. 4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label. (continued 25°C unless otherwise noted A ...
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... C 0.01 0.001 0 3.5 4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6900AS Rev B ( ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 135 °C/W θJA P(pk (t) θ Duty Cycle 100 FDS6900AS Rev B (X) 30 1000 1000 ...
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... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6900AS Rev B (X) 10V 20 10 1.2 ...
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... Figure 21. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 135 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6900AS Rev B (X) 30 ...
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... Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6900AS. Time: 10nS/DIV Figure 23. FDS6900AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690) ...
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... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 30. Switching Time Test Circuit + Figure 27. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 29. Gate Charge Waveform d(ON 90 DUT 50% 10% 0V Figure 31. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDS6900AS Rev B (X) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...