FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 2

• Manufacturer Part Number: FDS6900AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6900AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆BV
I
I
Symbol
C
C
C
R
V
∆V
R
I
g
Switching Characteristics
t
t
t
t
t
t
t
t
Electrical Characteristics
Off Characteristics
DSS
GSS
On Characteristics
Dynamic Characteristics
D(on)
d(on)
r
d(off)
f
d(on)
r
d(off)
f
∆T
FS
iss
oss
rss
G
GS(th)
DS(on)
∆T
DSS
GS(th)
DSS
J
J
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Parameter
(Note 2)
(Note 2)
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
f = 1.0 MHz
V
V
V
V
D
D
D
D
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
= 10 mA, Referenced to 25°C
= 250 uA, Referenced to 25°C
= 10 mA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 15 V,
= V
= V
= 5 V,
= 5 V,
= 10 V,
= 10 V, I
= 4.5 V,
= 10 V,
= 10 V, I
= 4.5 V,
= 10 V,
= 0 V,
= 0 V,
= 24 V,
= ±20 V, V
= 15 V,
= 10V, R
= 15 V,
= 4.5 V, R
Test Conditions
GS
GS
T
A
,
,
= 25°C unless otherwise noted
D
D
GEN
= 8.2 A, T
= 6.9 A, T
GEN
V
I
I
V
I
I
I
I
I
I
V
I
I
I
I
D
D
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
= 6 Ω
= 1 mA
= 250 uA
= 1 mA
= 250 µA
= 8.2 A
= 7.6 A
= 6.9 A
= 6.2 A
= 8.2 A
= 6.9 A
= 1 A,
= 1 A,
= 6 Ω
= 0 V
= 0 V,
= 0 V
= 5 V
J
J
= 125°C
= 125°C
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
30
20
1
1
–3.2
–4.2
570
600
180
150
1.9
1.9
2.8
2.2
27
22
17
23
21
22
30
27
25
21
70
70
10
26
23
11
10
15
16
14
9
5
4
3
3
9
6
4
±100
500
4.9
3.8
22
36
28
27
38
34
19
18
10
42
32
20
19
27
18
29
25
12
1
3
3
8
6
6
8
FDS6900AS Rev B (X)
mV/°C
mV/°C
mΩ
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
A
S
Ω
V