FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 9

• Manufacturer Part Number: FDS6900AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6900AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
Figure 26. Unclamped Inductive Load Test
Figure 28. Gate Charge Test Circuit
Figure 30. Switching Time Test
+
R
-
10V
V
GE
vary t
required peak I
V
V
GS
Drain Current
I
Circuit
R
GS
GS
g(REF
10µF
Same type as
P
V
GEN
0V
Duty Cycle ≤ 0.1%
Pulse Width ≤ 1µs
to obtain
DS
V
tp
V
GS
50kΩ
GS
V
Circuit
AS
DS
1µF
I
AS
0.01Ω
DUT
L
DUT
R
DUT
L
+
-
+
-
+
-
V
V
V
DD
DD
DD
Figure 27. Unclamped Inductive
10V
V
V
V
Figure 29. Gate Charge Waveform
GS
DS
GS
Figure 31. Switching Time Waveforms
0V
0V
10%
Q
t
d(ON)
90%
GS
Waveforms
Charge, (nC)
t
50%
ON
Q
10%
Pulse Width
I
G(TOT)
t
AS
Q
r
GD
t
P
BV
t
AV
DSS
t
)
d(OFF
90%
50%
t
OFF
V
t
10%
f
FDS6900AS Rev B (X)
DS
V
90%
DD