FDS9958 Fairchild Semiconductor, FDS9958 Datasheet - Page 2

• Manufacturer Part Number: FDS9958
• Description: MOSFET P-CH 60V DUAL SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9958

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 1020pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9958TR

©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
∆V
DSS
GSS
∆T
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
∆T
g
g
gs
gd
rr
Symbol
θJA
DSS
J
GS(th)
DSS
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C, L = 3mH, I
Parameter
AS
= 6A, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a) 78°C/W when
J
DD
= 25°C unless otherwise noted
mounted on a 1 in
pad of 2 oz copper
= 60V, V
GS
= 10V.
2
V
V
V
V
V
I
V
V
V
V
V
f = 1MHz
I
I
V
V
V
V
I
D
D
D
F
GS
GS
GS
GS
DD
DD
GS
GS
GS
DS
GS
GS
DS
GS
= -250µA, referenced to 25°C
= -2.9A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to 25°C
= 0V to -10V
= 0V to -4.5V
= -10V, I
= -30V, V
= -30V, I
= -10V, R
= -48V,
= 0V
= V
= -10V, I
= -4.5V, I
= -5V, I
= 0V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
= -1.3A
D
D
D
GS
GEN
= -2.9A
GS
DS
= -2.9A,
D
= -250µA
= -2.9A, T
= -2.9A
= -2.5A
= 0V,
= 0V
= 0V
= 6Ω
V
I
T
D
DD
J
= -2.9A
= 125°C
(Note 2)
= -30V,
J
= 125°C
θJC
b) 135°C/W when
is guaranteed by design while R
mounted on a
minimun pad
Min
-1.0
-60
Typ
-1.6
-0.8
103
131
765
-52
7.7
26
21
82
90
40
27
16
4
6
3
6
8
2
3
±100
1020
Max
-100
-1.2
-3.0
105
135
190
120
θCA
65
12
10
43
12
23
12
42
35
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
µA
nA
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V