FDS9958 Fairchild Semiconductor, FDS9958 Datasheet - Page 3

• Manufacturer Part Number: FDS9958
• Description: MOSFET P-CH 60V DUAL SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9958

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 1020pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9958TR

©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
10
12
10
8
6
4
2
0
8
6
4
2
0
Figure 3. Normalized On- Resistance
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
GS
V
V
I
D
DD
GS
-50
= -10V
= -2.9A
= -5V
= -10V
vs Junction Temperature
-V
-V
T
1
-25
J
DS
GS
,
On-Region Characteristics
1
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
T
0
= 25
J
= 150
2
V
o
V
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
C
GS
GS
25
GS
o
µ
C
= - 4.5V
= -5V
s
= - 4V
2
50
T
T
J
3
J
= -55
= 25°C unless otherwise noted
75
o
C
o
3
100 125 150
C )
V
V
4
GS
GS
µ
s
= -3.5V
= -3V
4
5
3
1E-3
0.01
240
210
180
150
120
2.5
2.0
1.5
1.0
0.5
0.1
Figure 2.
90
60
Figure 4.
10
20
Forward Voltage vs Source Current
1
vs Drain Current and Gate Voltage
Figure 6.
0.0
0
2
V
GS
V
GS
= -3V
-V
0.2
-V
SD
= 0V
2
Normalized On-Resistance
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
On-Resistance vs Gate to
GS
, BODY DIODE FORWARD VOLTAGE (V)
Source Voltage
Source to Drain Diode
T
,
I
-I
D
4
J
GATE TO SOURCE VOLTAGE
D
= -2.9A
= 150
,
DRAIN CURRENT(A)
0.4
4
o
C
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
V
0.6
GS
GS
6
6
= -4.5V
= -3.5V
µ
T
T
s
J
J
0.8
= 125
= 25
8
T
T
o
J
J
www.fairchildsemi.com
8
C
o
= 25
= -55
C
(
V
V
V
V
)
1.0
10
GS
GS
GS
o
o
C
µ
C
= -5V
= -10V
s
= -4V
1.2
10
12