FDS6912 Fairchild Semiconductor, FDS6912 Datasheet - Page 4

• Manufacturer Part Number: FDS6912
• Description: MOSFET N-CH DUAL PWM OPT 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 740pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Dc: 0452
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
0.01
I
D
R
0.1
= 6A
DS(ON)
0.0001
SINGLE PULSE
1
R
JA
V
T
GS
A
LIMIT
= 135
2
= 25
= 10V
o
o
C
C/W
D = 0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
4
0.1
1
g
0.05
, GATE CHARGE (nC)
0.02
0.001
DC
0.01
10s
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
SINGLE PULSE
V
DS
6
1s
Figure 11. Transient Thermal Response Curve.
= 10V
100ms
15V
10ms
10
8
0.01
1ms
20V
100 s
10
100
12
0.1
t
1
, TIME (sec)
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
1
rss
0.01
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
10
- T
100
JA
JA
C
(t) = r(t) * R
A
iss
t
SINGLE PULSE
= 135°C/W
1
R
= P * R
t
15
2
JA
T
A
= 135°C/W
FDS6912A Rev D(W)
100
= 25°C
V
f = 1MHz
GS
JA
1
JA
(t)
= 0 V
/ t
2
1000
1000
20