SI4511DY-T1-E3 Vishay, SI4511DY-T1-E3 Datasheet
SI4511DY-T1-E3
Specifications of SI4511DY-T1-E3
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SI4511DY-T1-E3 Summary of contents
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... Top View Si4511DY -T1-E3 Ordering Information: (Lead (Pb)-free) Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4511DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b R Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltag a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... On-Resistance vs. Drain Current 9 Total Gate Charge (nC) g Gate Charge Document Number: 72223 S09-0867-Rev. E, 18-May- 1.00 1.25 1.50 1. Si4511DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 1600 C iss 1200 800 C oss C rss 400 ...
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... Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1 ...
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... Single Pulse 0. Document Number: 72223 S09-0867-Rev. E, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4511DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C thJA ( − ...
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... Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 0.0 0.4 0 Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 2 1.5 V 1.2 1 ° ° ...
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... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si4511DY Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power I Limited DM P(t) = 0.001 P( ...
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... Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...