Si4511DY-T1 Vishay Siliconix, Si4511DY-T1 Datasheet

no-image

Si4511DY-T1

Manufacturer Part Number
Si4511DY-T1
Description
N- and P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si4511DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
Si4511DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si4511DY-T1-E3
Quantity:
70 000
Part Number:
Si4511DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
Si4511DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4511DY
N Channel
N-Channel
P Channel
P-Channel
Surface Mounted on FR4 Board.
t v 10 sec
i
G
G
S
S
J
1
1
2
2
ti
1
2
3
4
t A bi
V
Top View
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
DS
SO-8
Parameter
Parameter
−20
20
20
20
J
J
a, b
a, b
(V)
= 150_C)
= 150_C)
t
a
a
N- and P-Channel 20-V (D-S) MOSFET
8
7
6
5
a, b
a, b
0.033 @ V
0.050 @ V
0.0145 @ V
0.017 @ V
D
D
D
D
1
1
2
2
a, b
r
DS(on)
Steady-State
Steady-State
GS
GS
t v 10 sec
T
T
T
T
GS
GS
A
A
A
A
(W)
= −4.5 V
= −2.5 V
= 25_C
= 70_C
= 25_C
= 70_C
= 4.5 V
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
, T
I
I
DM
I
thJA
thJF
GS
DS
D
D
S
D
D
stg
I
D
−6.2
9.6
8.6
−5
(A)
G
10 sec.
1
9.6
7.7
1.7
1.3
Typ
2
50
85
30
N-Channel
N-Channel
"16
Steady State
D
S
20
40
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
1
1
7.2
5.8
0.9
1.1
0.7
Max
62.5
110
40
−55 to 150
10 sec.
G
−6.2
−4.9
−1.7
1.3
2
Typ
2
50
90
30
P-Channel
P- Channel
Vishay Siliconix
"12
−20
−40
Steady State
D
S
2
2
−4.6
−3.7
0.9
1.1
0.7
Si4511DY
Max
62.5
110
35
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

Related parts for Si4511DY-T1

Si4511DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4511DY Si4511DY-T1 (with Tape and Reel) Si4511DY—E3 (Lead (Pb)-Free) Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si4511DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain Source On State Resistance ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 72223 S-41496—Rev. B, 09-Aug- 1.25 1.50 1.75 2000 1600 1200 Si4511DY Vishay Siliconix N−CHANNEL Transfer Characteristics 125_C C 8 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J www.vishay.com 4 0.05 0.04 0.03 0. 25_C J 0.01 0.00 0.8 1.0 1.2 100 125 ...

Page 5

... Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec 2 1 1.6 2.0 Si4511DY Vishay Siliconix N−CHANNEL Notes Duty Cycle Per Unit Base = R = 85_C/W thJA ( − ...

Page 6

... Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 0. 0.04 0.02 0. − Drain Current (A) D Gate Charge 6 − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C ...

Page 7

... I D(on) Limited T = 25_C C 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage (V) DS −2 − Square Wave Pulse Duration (sec) Si4511DY Vishay Siliconix P-CHANNEL Single Pulse Power −2 − Time (sec) Limited DM P(t) = 0.001 P(t) = 0.01 P(t) = 0 100 ...

Page 8

... Si4511DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 8 −2 − Square Wave Pulse Duration (sec) P-CHANNEL 1 10 Document Number: 72223 S-41496—Rev. B, 09-Aug-04 ...

Related keywords