2N7002PV,115 NXP Semiconductors, 2N7002PV,115 Datasheet - Page 5

• Manufacturer Part Number: 2N7002PV,115
• Description: MOSFET N-CH DUAL 60V SOT-666
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PV,115

• Package / Case: SS Mini-6 (SOT-666)
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

NXP Semiconductors
2N7002PV
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
typical values
FR4 PCB, mounting pad for drain 1 cm
typical values
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
−3
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
0.75
0.33
0.05
0.75
0.33
0.05
0.02
0.01
0.2
0.02
0.01
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
2
−1
−1
Rev. 1 — 5 August 2010
1
1
60 V, 350 mA N-channel Trench MOSFET
10
10
10
10
2
2
2N7002PV
t
t
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
017aaa064
017aaa065
10
10
3
3
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