2N7002PV NXP Semiconductors, 2N7002PV Datasheet
![Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415245/sot666_3d_sml.gif)
2N7002PV
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2N7002PV Summary of contents
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... V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ...
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... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Simplified outline Graphic symbol Marking code ZF Min - - [ ° ...
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... T amb junction temperature ambient temperature storage temperature 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Min = 25 °C [ °C [ °C [2] - −55 − ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 017aaa063 (1) (2) (3) (4) (5) (6) 10 ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002PV Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 017aaa064 (s) p 017aaa065 ...
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... [ 500 [ 200 300 mA 4 250 Ω Ω 115 mA 0.47 GS 2N7002PV Typ Max Unit - - V 1.75 2.4 V μ μ 100 nA Ω 1.3 2 Ω 1 1.6 400 - mS 0.6 0 ...
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... V 2.5 V 3.0 4.0 V (V) DS Fig 7. 017aaa019 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) −5 10 − ° amb DS (1) minimum values ...
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... V (V) GS Fig 11. Per transistor: Normalized drain-source 017aaa023 120 180 T (°C) amb Fig 13. Per transistor: Input, output and reverse All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 − DSon ----------------------------- DSon 25° ...
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... Q (nC °C amb Fig 15. Per transistor: Gate charge waveform 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET detail 0.1 0.1 EUROPEAN PROJECTION © NXP B.V. 2010. All rights reserved. SOT666 ISSUE DATE ...
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... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 0.4 0.3 0.25 (6×) (2×) (2×) 0.325 0.375 Dimensions in mm (4×) (4×) 0.6 (2×) 0.65 (2×) © ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002PV v.1 20100805 2N7002PV Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Change notice ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 2N7002PV 60 V, 350 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002PV All rights reserved. Date of release: 5 August 2010 Document identifier: 2N7002PV ...