IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 3

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.01
100
100
0.1
0.1
10
10
1
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
0.1
1
T J = 175°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2
1
T J = 25°C
2.3V
3
V DS = 15V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
4
10
TOP
BOTTOM
5
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
6
2.0
1.5
1.0
0.5
100
0.1
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I D = 9.8A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
20 40 60 80 100 120 140 160 180
1
2.3V
≤60μs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
3
100