IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 9

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Notes:
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www.irf.com
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
When mounted on 1 inch square copper board.
Starting T
θ
is measured at
J
= 25°C, L = 1.43mH, R
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
J
8.1 ( .318 )
7.9 ( .312 )
G
TERMINAL NUMBER 1
= 25Ω, I
(12.992)
330.00
MAX.
AS
= 8.0A.
FEED DIRECTION
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
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