IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 4

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
10000
100
1000
0.1
10
100
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2
0.1
Drain-to-Source Voltage
0.4
T J = 175°C
Ciss
Crss
V SD , Source-to-Drain Voltage (V)
Coss
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
0.8
1
T J = 25°C
1.0
f = 1 MHZ
1.2
10
1.4
V GS = 0V
1.6
1.8
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
16
12
8
4
0
0
Fig 6. Typical Gate Charge vs.
0
T A = 25°C
Tj = 175°C
Single Pulse
I D = 8.0A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
2
Q g , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
1
V DS = 24V
V DS = 15V
6
10msec
100μsec
1msec
8
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10
10
12
100
14