IRF7309PBF International Rectifier, IRF7309PBF Datasheet

IRF7309PBF

Manufacturer Part Number

IRF7309PBF

Description

MOSFET N+P 30V 3A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF7309TRPBF.pdf (11 pages)

2.IRF7309PBF.pdf (8 pages)

Specifications of IRF7309PBF

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

50 mOhm @ 2.4A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4A, 3A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 4.5V

Input Capacitance (ciss) @ Vds

520pF @ 15V

Power - Max

1.4W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Number Of Elements

Polarity

N/P

Channel Mode

Enhancement

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Power Dissipation

1.4W

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOIC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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HEXFET

Description

Thermal Resistance

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design for

which HEXFET Power MOSFETs are well known, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in an

application with dramatically reduced board space. The package is designed for

vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.

** When mounted on 1" square PCB (FR-4 or G-10 Material).

dv/dt

@ T

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

STG

For recommended footprint and soldering techniques refer to application note #AN-994.

= 25°C

= 70°C

= 25°C

Power MOSFET

Parameter

10 Sec. Pulse Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Linear Derating Factor (PCB Mount)**

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

PRELIMINARY

@ 10V

147

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

Min.

––––

N-Channel

4.7

4.0

3.2

6.9

-55 to + 150

Max.

0.011

± 20

1.4

Typ.

––––

DS(on)

IRF7309

DSS

P-Channel

-3.5

-3.0

-2.4

-6.0

-12

PD - 9.1243B

SO-8

0.050

N-Ch

Max.

30V

Units

0.10

W/°C

P-Ch

V/ns

-30V

°C

Units

°C/W

Related parts for IRF7309PBF

IRF7309PBF Summary of contents

Page 1

... Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRF7309 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRF7309 1000 1MHz iss rss oss ds gd 800 C iss 600 C oss 400 200 ...

Page 5

T , Ambient Temperature (°C) A Fig 9. Max. Drain Current Vs. Ambient Temp. Fig 11a. Gate Charge Test Circuit 100 VGS TOP - 15V - 10V - 8.0V - 7.0V ...

Page 6

IRF7309 100 T = 25° 150° 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 14. Typical Transfer Characteristics 1000 1MHz GS C ...

Page 7

T = 150° 25° 0.1 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Fig 18. Typical Source-Drain Diode Forward Voltage 3.0 2.0 1.0 0 100 T , AmbientTemperature ...

Page 8

IRF7309 Fig 22b. Gate Charge Test Circuit 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for ...

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