IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 9. Max. Drain Current Vs. Ambient Temp.
Fig 12. Typical Output Characteristics, T
100
10
4.0
3.0
2.0
1.0
0.0
Fig 11a. Gate Charge Test Circuit
1
0.1
25
TOP
BOTTOM - 4.5V
-V
T , Ambient Temperature (°C)
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
- 15V
VGS
50
DS
A
, Drain-to-Source Voltage (V)
1
75
100
20µs PULSE WIDTH
T = 25°C
-4.5V
J
10
125
J
150
= 25
A
100
P-Channel
o
N-Channel
A
C
151
Fig 13. Typical Output Characteristics,T
Fig 11b. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
0.1
TOP
BOTTOM - 4.5V
-V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
- 15V
VGS
DS
, Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
T = 150°C
-4.5V
J
IRF7309
10
J
= 150
100
A
o
C