IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7309
Fig 5. Typical Capacitance Vs. Drain-to-
1000
100
0.1
800
600
400
200
10
1
0
0.0
Fig 7. Typical Source-Drain Diode
1
T = 150°C
V
V
J
SD
0.5
DS
C
C
C
Forward Voltage
oss
rss
iss
Source Voltage
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
1.0
T = 25°C
gs
ds
gd
J
+ C
+ C
10
gd
gd
f = 1MHz
1.5
, C
ds
SHORTED
2.0
V
GS
= 0V
N-Channel
2.5
100
A
150
A
20
16
12
8
4
0
100
Fig 8. Maximum Safe Operating Area
0.1
10
0
1
I
V
0.1
D
Fig 6. Typical Gate Charge Vs.
DS
T
T
Single Pulse
= 2.4A
A
J
= 24V
Gate-to-Source Voltage
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
Q , Total Gate Charge (nC)
5
V
G
DS
, Drain-to-Source Voltage (V)
1
10
BY R
DS(on)
FOR TEST CIRCUIT
15
SEE FIGURE 11
10
20
1ms
100µs
10ms
100ms
25
100
A
A