STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet
STS8DN3LLH5
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STS8DN3LLH5 Summary of contents
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... Device summary Order code STS8DN3LLH5 January 2010 Dual N-channel 30 V, 0.0155 Ω SO-8 STripFET™ V Power MOSFET R DS(on max < 0.019 Ω ( DS(on) Figure 1. Marking 8DN3LL Doc ID 16967 Rev 1 STS8DN3LLH5 SO-8 Internal schematic diagram Package Packaging SO-8 Tape and reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 16967 Rev 1 STS8DN3LLH5 ...
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... STS8DN3LLH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (2) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature T stg 1. The value is rated according R 2 ...
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... ± 4 Parameter Test conditions f=1 MHz = 4 Figure 14 f=1 MHz gate dc bias=0 test signal level = 20 mV open drain Doc ID 16967 Rev 1 STS8DN3LLH5 Min. Typ 250 µ 0.0155 0.019 0.020 0.022 D Min. Typ. Max. 724 - 132 5 2.1 - Max. Unit V 1 µA 10 µA ± ...
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... STS8DN3LLH5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...
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... Figure 3. AM04963v1 Tj=150°C Tc=25°C Single pulse 10ms 100ms (V) DS Figure 5. AM04954v1 (A) 100 ( temperature Figure 7. AM04956v1 R DS(on) (Ohm) T (°C) 100 150 J Doc ID 16967 Rev 1 STS8DN3LLH5 Thermal impedance Transfer characteristics = Static drain-source on resistance I = =10V AM04955v1 10 V (V) GS AM04957v1_a 10 I (A) D ...
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... STS8DN3LLH5 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =11A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 - Figure 12. Source-drain diode forward characteristics V SD (V) T =-50°C J 0.9 0.8 0.7 0.6 0.5 0.4 ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 16967 Rev 1 STS8DN3LLH5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STS8DN3LLH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 16967 Rev 1 Package mechanical data ® 9/12 ...
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... Doc ID 16967 Rev 1 STS8DN3LLH5 inch MIN. TYP. 0.003 0.025 0.013 0.007 0.010 45 (typ.) 0.188 0.228 0.050 0.150 0.14 0.015 8 (max.) MAX. 0.068 0.009 ...
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... STS8DN3LLH5 5 Revision history Table 8. Document revision history Date 12-Jan-2010 Revision 1 First release Doc ID 16967 Rev 1 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 16967 Rev 1 STS8DN3LLH5 ...