STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 10

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

Package mechanical data
10/12
DIM.
a1
a2
a3
b1
c1
e3
M
A
C
D
E
S
b
e
F
L
MIN.
0.65
0.35
0.19
0.25
0.1
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
Doc ID 16967 Rev 1
mm.
TYP
1.27
3.81
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45 (typ.)
8 (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
MIN.
0.14
0.050
0.150
TYP.
inch
STS8DN3LLH5
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023