STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 9

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

STS8DN3LLH5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 16967 Rev 1
Package mechanical data
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®