IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 3
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IRF7351PBF
Manufacturer Part Number
IRF7351PBF
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7351TRPBF.pdf
(10 pages)
Specifications of IRF7351PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
0.1
10
1
1
0.1
2
T J = 150°C
V DS , Drain-to-Source Voltage (V)
3.8V
V GS , Gate-to-Source Voltage (V)
1
3
≤ 60µs PULSE WIDTH
Tj = 25°C
10
V DS = 25V
≤ 60µs PULSE WIDTH
4
T J = 25°C
TOP
BOTTOM
100
5
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
6
100
10
1
2.0
1.8
1.5
1.3
1.0
0.8
0.5
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig 4. Normalized On-Resistance
I D = 8.0A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
3.8V
T J , Junction Temperature (°C)
1
vs. Temperature
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
100
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
3