IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7351PBF
• Description: MOSFET N-CH 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 12. On-Resistance vs. Gate Voltage
50
40
30
20
10
0
I
AS
0
R G
20V
V DS
V
GS
V GS, Gate -to -Source Voltage (V)
t p
5
I AS
D.U.T
t p
0.01 Ω
L
10
T J = 25°C
V
T J = 125°C
(BR)DSS
15V
DRIVER
15
I D = 8.0A
+
-
V DD
A
20
1400
1200
1000
90%
800
600
400
200
V
10%
V
DS
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
0
Fig 13. Maximum Avalanche Energy
GS
25
Starting T J , Junction Temperature (°C)
t
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
50
V
vs. Drain Current
GS
t
r
V
DS
75
t
d(off)
100
D.U.T
TOP
BOTTOM 6.4A
L
D
www.irf.com
V
t
DD
f
125
+
I D
0.79A
-
0.53A
150