IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 6
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IRF7351PBF
Manufacturer Part Number
IRF7351PBF
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7351TRPBF.pdf
(10 pages)
Specifications of IRF7351PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 12. On-Resistance vs. Gate Voltage
50
40
30
20
10
0
I
AS
0
R G
20V
V DS
V
GS
V GS, Gate -to -Source Voltage (V)
t p
5
I AS
D.U.T
t p
0.01 Ω
L
10
T J = 25°C
V
T J = 125°C
(BR)DSS
15V
DRIVER
15
I D = 8.0A
+
-
V DD
A
20
1400
1200
1000
90%
800
600
400
200
V
10%
V
DS
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
0
Fig 13. Maximum Avalanche Energy
GS
25
Starting T J , Junction Temperature (°C)
t
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
50
V
vs. Drain Current
GS
t
r
V
DS
75
t
d(off)
100
D.U.T
TOP
BOTTOM 6.4A
L
D
www.irf.com
V
t
DD
f
125
+
I D
0.79A
-
0.53A
150