IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 4
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IRF7351PBF
Manufacturer Part Number
IRF7351PBF
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7351TRPBF.pdf
(10 pages)
Specifications of IRF7351PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100000
4
10000
1000
100
100
0.1
10
10
1
Fig 7. Typical Source-Drain Diode
0.0
Fig 5. Typical Capacitance vs.
1
Drain-to-Source Voltage
C rss
C oss
C iss
0.2
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 150°C
0.4
0.6
f = 1 MHZ
10
T J = 25°C
0.8
V GS = 0V
1.0
1.2
100
1000
100
0.1
10
14.0
12.0
10.0
1
8.0
6.0
4.0
2.0
0.0
0.01
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
T A = 25°C
Tj = 150°C
Single Pulse
0
I D = 6.4A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
DC
0.1
5
Q G , Total Gate Charge (nC)
V DS = 48V
V DS = 30V
V DS = 12V
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1
15
1msec
10
20
www.irf.com
25
100
100µsec
30
1000
35