GWM100-01X1-SMD IXYS, GWM100-01X1-SMD Datasheet

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GWM100-01X1-SMD

Manufacturer Part Number
GWM100-01X1-SMD
Description
IC FULL BRIDGE 3PH ISOPLUS SMD
Manufacturer
IXYS
Datasheet

Specifications of GWM100-01X1-SMD

Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 10V
Mounting Type
Surface Mount
Package / Case
Surface Mount
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
90
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
68
Rds(on), Max, Tj = 25°c, (mohms)
8.5
Tf, Typ, (ns)
55
Tr, Typ, (ns)
95
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
1)
DSS
GSS
D25
D90
F25
F90
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste (IXYS test setup)
D
J
J
C
C
C
C
GS
DS
DS
GS
GS
GS
= 70 A; R
= 125°C
= 25°C to 150°C
= 25°C
= 90°C
= 25°C (diode)
= 90°C (diode)
+ 2R
= V
= 10 V ; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= 10 V; V
DSS
Pin to Chip
; V
G
D
D
GS
DS
DS
)
= 33 Ω;
= 80 A
= 250 µA
DS
= 0 V
= 65 V; I
= 48 V
= 0 V
D
= 90 A
T
T
T
T
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
G1
S1
G2
S2
(T
J
= 25°C, unless otherwise specified)
min.
G3
G4
S4
S3
2.5
Characteristic Values
0.007
Maximum Ratings
typ.
130
290
7.5
0.1
0.4
0.4
1.3
14
90
30
30
95
55
G5
G6
S6
S5
max.
± 20
100
8.5
4.5
0.2
1.0
1.6
90
68
90
68
1
K/W
K/W
mW
mW
mA
mJ
mJ
mJ
nC
nC
nC
µA
µA
ns
ns
ns
ns
L+
L1
L2
L3
L-
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 2 lead frames available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
DSS
DSon typ.
connections
with optimized heat transfer
Straight leads
GWM 100-01X1
DSon
= 7.5 mW
= 100 V
= 90 A
Surface Mount Device
20110307e
1 - 6

Related parts for GWM100-01X1-SMD

GWM100-01X1-SMD Summary of contents

Page 1

... E recoff R thJC R with heat transfer paste (IXYS test setup) thJH ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings ± 20 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... P pins and mounting tab in the case Weight ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 0.9 1 0.95 ...

Page 3

... Part Name & Leads Ordering Packing Unit Marking Straight Standard GWM 100-01X1 - SL SMD Standard GWM 100-01X1 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved L eads GWM 100-01X1-SL 37,5 +0,20 (11x) 3 ±0,05 1,5 1 ±0,05 4,5 12 ± ...

Page 4

... Fig. 3 Typical output characteristic 2 2.0 1 DS(on) 1.0 0.5 0.0 - [°C] J Fig. 5 Drain source on-state resistance R versus junction temperature T IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 100 125 150 DSS 25° 6 5 normalized DS(on 100 ...

Page 5

... E rec(off) 0 100 R [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved = 100 120 300 250 200 150 t ...

Page 6

... F Fig. 15 Reverse recovery charge Q of the body diode vs. di d(on) r Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 125° 125° ...

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