GWM100-01X1-SMD IXYS, GWM100-01X1-SMD Datasheet - Page 5

• Manufacturer Part Number: GWM100-01X1-SMD
• Description: IC FULL BRIDGE 3PH ISOPLUS SMD
• Manufacturer: IXYS

Specifications of GWM100-01X1-SMD

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 90
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 68
• Rds(on), Max, Tj = 25°c, (mohms): 8.5
• Tf, Typ, (ns): 55
• Tr, Typ, (ns): 95
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
14
12
10
8
6
4
2
0
0
0
0
Fig.7 Gate charge characteristic
Fig. 9 Typ. turn-on energy & switching times
Fig. 11 Typ. turn-on energy & switching times
V
V
R
T
V
V
I
T
I
T
D
D
DS
GS
J
10 20 30 40 50 60 70 80 90 100
J
10 20 30 40 50 60 70 80 90 100
G
DS
GS
J
= 90 A
= 125°C
= 125°C
= 90 A
= 33 Ω
= 25°C
= 48 V
= +10/0 V
= 48 V
= +10/0 V
20
vs. collector current, inductive switching
vs. gate resistor, inductive switching
E
on
40
E
rec(off)
Q
E
R
I
on
E
G
D
G
60
rec(off)
[nC]
[A]
x10
[Ω]
V
x10
DS
80
= 20 V
V
DS
100
= 65 V
t
t
d(on)
r
t
t
d(on)
r
120
300
250
200
150
100
50
0
400
350
300
250
200
150
100
50
0
120
100
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0
0
0
Fig. 8 Drain current I
Fig. 10 Typ. turn-off energy & switching times
Fig. 12 Typ. turn-off energy & switching times
V
V
I
T
D
10 20 30 40 50 60 70 80 90 100
J
10 20 30 40 50 60 70 80 90 100
DS
GS
E
= 90 A
25
= 125°C
off
= 48 V
= +10/0 V
E
off
vs. collector current, inductive switching
vs. gate resistor, inductive switching
50
V
V
R
T
J
DS
GS
G
= 125°C
= 33 Ω
75
= 48 V
= +10/0 V
T
R
I
GWM 100-01X1
D
100 125 150 175 200
C
G
D
[A]
[°C]
[Ω]
vs. case temperature T
T
J
= 175°C
t
d(off)
t
f
t
t
d(off)
f
20110307e
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
C
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