GWM100-01X1-SMD IXYS, GWM100-01X1-SMD Datasheet - Page 4

• Manufacturer Part Number: GWM100-01X1-SMD
• Description: IC FULL BRIDGE 3PH ISOPLUS SMD
• Manufacturer: IXYS

Specifications of GWM100-01X1-SMD

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 90
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 68
• Rds(on), Max, Tj = 25°c, (mohms): 8.5
• Tf, Typ, (ns): 55
• Tr, Typ, (ns): 95
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
180
160
140
120
100
1.2
1.1
1.0
0.9
0.8
0.7
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
-25
-25
0
Fig. 1 Drain source breakdown voltage V
Fig. 3 Typical output characteristic
Fig. 5 Drain source on-state resistance R
V
20 V
15 V
V
I
GS
D
GS
I
DSS
=
=
= 10 V
0
0
= 0.25 mA
1
vs. junction temperature T
90 A
versus junction temperature T
25
25
10 V
R
2
DS(on)
50
50
T
V
T
J
J
DS
3
[°C]
[°C]
[V]
75
75
R
DS(on)
4
100
100
7 V
normalized
J
T
J
= 25°C
125
125
5
J
6.5 V
5.5 V
6 V
5 V
DSS
DS(on)
150
150
6
20
16
12
8
4
0
180
160
140
120
100
180
160
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0
0
0
Fig. 2 Typical transfer characteristic
Fig. 4 Typical output characteristic
Fig. 6 Drain source on-state
5.5 V 6 V
20 40 60 80 100 120 140 160 180 200
V
1
DS
1
resistance R
= 30 V
V
20 V
15 V
GS
2
=
6.5 V
2
3
GWM 100-01X1
V
V
7 V
DS(on)
I
GS
DS
D
4
3
[A]
[V]
[V]
T
10 V
versus I
J
= 125°C
5
7 V
4
D
T J = 125°C
T
6
T
J
J
= 25°C
= 125°C
5
6.5 V
5.5 V
7
6 V
5 V
10 V
20110307e
V
15 V
20 V
GS
4 - 6
=
8
6