TPCF8304(TE85L,F) Toshiba, TPCF8304(TE85L,F) Datasheet

TPCF8304(TE85L,F)

Manufacturer Part Number

TPCF8304(TE85L,F)

Description

MOSFET P-CH DUAL 30V 3.2A 2-3U1B

Manufacturer

Toshiba

Datasheet

1.TPCF8304TE85LF.pdf (7 pages)

Specifications of TPCF8304(TE85L,F)

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

72 mOhm @ 1.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

3.2A

Vgs(th) (max) @ Id

1.2V @ 1mA

Gate Charge (qg) @ Vgs

14nC @ 10V

Input Capacitance (ciss) @ Vds

600pF @ 10V

Power - Max

530mW

Mounting Type

Surface Mount

Package / Case

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.072 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.2 A

Power Dissipation

1.35 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 7
Download datasheet (284Kb)

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power

dissipation

(t = 5 s) (Note 2a) Single-device value at

Drain power

dissipation

(t = 5 s) (Note 2b) Single-device value at

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: For Notes 1 to 6, see the next page.

Caution: This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

Characteristic

Pulse

Single-device operation

dual operation (Note 3b)

Single-device operation

dual operation (Note 3b)

= 20 kΩ)

DSS

(Note 2a, 3b, 5)

= −0.8 to −2.0 V, (V

= −10 µA (max) (V

(Note 3a)

(Note 1)

(Note 4)

DS (ON)

(Ta = 25°C)

TPCF8304

| = 5.9 S (typ.)

Symbol

= 60 mΩ (typ.)

DGR

D (1)

D (2)

D (1)

D (2)

DSS

GSS

stg

= −10 V, I

= −30 V)

-55~150

Rating

-12.8

±20

1.35

1.12

0.53

0.33

0.67

0.11

-3.2

-1.6

150

-30

= −1 mA)

Unit

°C

Weight: 0.011 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

2-3U1B

TPCF8304

2006-11-17

―

Unit: mm

Related parts for TPCF8304(TE85L,F)

TPCF8304(TE85L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2b) ...

Page 3

Electrical Characteristics Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...

Page 4

I – Common source -3.5 - 25°C -6 Pulse test -3.0 -4 -4.5 -2 -2.3 0 -0.4 -0.8 0 -0.2 -0.6 Drain-source voltage V DS (V) I – ...

Page 5

R – (ON) 150 120 -0.8A, -1.6A, -3. -4. -0.8A, -1.6A, -3. -10V 30 Common source Pulse test 0 −80 − ...

Page 6

Single pulse 100 10 1 0.001 0.01 Safe operating area -100 I D max (pulsed Single pulse Ta = 25°C Curves must be derated linearly with V DSS increase ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

Related keywords

tpcf8303
TPCF8304(TE85L,F) datasheet
TPCF8304(TE85L,F) data sheet
TPCF8304(TE85L,F) pdf datasheet
TPCF8304(TE85L,F) component
TPCF8304(TE85L,F) part
TPCF8304(TE85L,F) distributor
TPCF8304(TE85L,F) RoHS
TPCF8304(TE85L,F) datasheet download