TPCF8304(TE85L,F) Toshiba, TPCF8304(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: TPCF8304(TE85L,F)
• Description: MOSFET P-CH DUAL 30V 3.2A 2-3U1B
• Manufacturer: Toshiba

Specifications of TPCF8304(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
120
150
100
2.0
1.6
1.2
0.8
0.4
90
60
30
10
−80
-0.1
0
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
V GS = -4.5V
−40
Drain-source voltage V DS (V)
40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I D = -0.8A, -1.6A, -3.2A
V GS = -10V
Capacitance – V
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5s
0
-1
R
DS (ON)
80
P
D
40
-3 -5
– Ta
I D = -0.8A, -1.6A, -3.2A
– Ta
120
C iss
-10
80
C rss
DS
Common source
Pulse test
C oss
160
120
-30 -50 -100
160
200
5
-2.0
-1.5
-1.0
-0.5
-30
-15
-10
0.5
0.3
0.1
-25
-20
10
-5
5
3
1
−80
0
0
0
0
-6
-12
Common source
V DS = -10 V
I D = -1mA
Pulse test
V DS
V DD = -24V
-10
−40
0.3
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
4
-5.0
Dynamic input/output
-3.0
0
characteristics
0.6
I
DR
V
th
-1.0
V DD = -6V
-24
– V
40
8
– Ta
DS
0.9
-12
V GS = 0 V
Common source
Ta = 25°C
Pulse test
80
12
Common
source
I D = -3.2 A
Ta = 25°C
Pulse test
1.2
120
V GS
TPCF8304
2006-11-17
1.5
160
16
-15
-10
-5
0