UPA505T-T1-A Renesas Electronics America, UPA505T-T1-A Datasheet - Page 8

• Manufacturer Part Number: UPA505T-T1-A
• Description: MOSFET N/P-CH 50V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA505T-T1-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.8V @ 1µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

• P-ch part
6
–120
–100
–80
–60
–40
–20
–2.4
–2.2
–2.0
–1.8
–1.6
–1.4
–1.2
100
80
60
40
20
0
0
–30
Pulsed
measurement
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
20
–2
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
0
V
T
T
DS
40
C
ch
–4
- Drain to Source Voltage - V
- Case Temperature - ˚C
- Channel Temperature - ˚C
–10 V
30
60
–6
80
60
–8
–8 V
100
90
–10
V
120
V
I
GS
D
DS
= –1 A
= –4 V
120
= –5.0 V
–12
–6 V
140 160
–14
150
–0.001
–0.01
–100
100
–0.1
–10
350
300
250
200
150
100
50
20
10
–1
50
5
2
1
0
–1
0
V
DS
= –5.0 V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
–2
25
TRANSFER CHARACTERISTICS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
V
A
GS
- Ambient Temperature - ˚C
I
- Gate to Source Voltage - V
D
T
50
–5
–5
A
75 ˚C
25 ˚C
–25 ˚C
- Drain Current - mA
= 150 ˚C
–10
75
T
150 ˚C
25 ˚C
75 ˚C
A
= –25 ˚C
–20
100
–10
V
Pulsed
measurement
DS
Free air
= –5.0 V
125
–50
PA505T
–100
150
–15