UPA505T-T2-A Renesas Electronics America, UPA505T-T2-A Datasheet

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UPA505T-T2-A

Manufacturer Part Number
UPA505T-T2-A
Description
MOSFET N/P-CH 50V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA505T-T2-A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 Ohm @ 10mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.8V @ 1µA
Input Capacitance (ciss) @ Vds
16pF @ 5V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA505T-T2-A Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The PA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as ...

Page 4

ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V Forward Transfer Admittance |y Drain to Source On-State Resistance R Drain to Source On-State Resistance R Input Capacitance C Output Capacitance ...

Page 5

SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) • N-ch part DUT Duty Cycle 1 % • P-ch part DUT Duty ...

Page 6

TYPICAL CHARACTERISTICS (T • N-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 50 measurement Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE ...

Page 8

P-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –120 –10 V ...

Page 9

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed measurement I = – – –4 –8 –12 – Gate to Source Voltage - V GS DRAIN TO ...

Page 10

REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 8 PA505T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E ...

Page 11

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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