AO4619 Alpha & Omega Semiconductor Inc, AO4619 Datasheet - Page 5
![MOSFET N/P-CH COMPL 30V 8-SOIC](/photos/5/45/54513/ao4619_sml.jpg)
AO4619
Manufacturer Part Number
AO4619
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4619.pdf
(7 pages)
Specifications of AO4619
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A, 5.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
820pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1044-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4619
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4619B
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4619L
Manufacturer:
AOS/万代
Quantity:
20 000
AO4619
Alpha & Omega Semiconductor, Ltd.
P-cahnnel MOSFET Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 1.Mar 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
JA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
is measured with the device mounted on 1in
Parameter
2
J
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
FR-4 board with 2oz. Copper, in a still air environment with T
=25° C unless otherwise noted)
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
=-1A,V
GS
GS
GS
GS
GEN
=-5.2A, dI/dt=100A/ s
=-5.2A, dI/dt=100A/ s
=-250 A, V
FR-4 board with 2oz. Copper, in a still air environment with T
=-24V, V
=0V, V
=V
=-5V, I
=-10V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3
GS
JL
GS
I
and lead to ambient.
D
D
GS
DS
DS
=0V
=-250 A
=-5.2A
D
D
GS
DS
DS
DS
=±20V
=-15V, f=1MHz
=0V, f=1MHz
=-5.2A
GS
=-4A
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
T
L
=-5.2A
T
J
=3 ,
=125° C
J
=55° C
Min
-30
-25
-1
-1.88
-0.77
12.7
Typ
680
115
55
6.4
7.7
6.8
38
59
11
86
20
10
22
15
8
2
4
A
=25° C. The SOA
±100
www.aosmd.com
A
Max
-2.5
816
69
-5
=25° C. The
48
74
12
-1
-3
-1
Units
m
m
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A