AO4619 Alpha & Omega Semiconductor Inc, AO4619 Datasheet - Page 7
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AO4619
Manufacturer Part Number
AO4619
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4619.pdf
(7 pages)
Specifications of AO4619
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A, 5.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
820pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1044-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4619
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4619B
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4619L
Manufacturer:
AOS/万代
Quantity:
20 000
AO4619
Alpha & Omega Semiconductor, Ltd.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
0.1
10
8
6
4
2
0
1
0.1
0
0.001
0.01
R
limited
0.1
10
DS(ON)
0.00001
T
T
Figure 9: Maximum Forward Biased Safe
1
J(Max)
A
=25° C
Figure 7: Gate-Charge Characteristics
=150° C
3
D=T
T
R
J,PK
Operating Area (Note E)
JA
V
I
D
DS
=110° C/W
=-5.2A
on
=T
/T
=-15V
1
0.0001
A
+P
6
-V
DM
-Q
DS
.Z
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
g
(Volts)
DC
(nC)
JA
.R
I
9
F
JA
0.001
=-6.5A, dI/dt=100A/ s
Single Pulse
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
1ms
10ms
100ms
1s
10s
0.01
100 s
100
15
Pulse Width (s)
0.1
1200
1000
40
30
20
10
800
600
400
200
0
0.0001
0
0
Figure 10: Single Pulse Power Rating Junction-
C
rss
0.001
C
1
oss
5
P
Figure 8: Capacitance Characteristics
D
0.01
to-Ambient (Note E)
T
10
on
Pulse Width (s)
10
0.1
T
-V
DS
15
(Volts)
C
iss
1
100
20
T
T
10
J(Max)
A
=25° C
www.aosmd.com
=150° C
100
25
1000
1000
30