NTHD2102PT1G ON Semiconductor, NTHD2102PT1G Datasheet
NTHD2102PT1G
Specifications of NTHD2102PT1G
NTHD2102PT1GOS
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NTHD2102PT1G Summary of contents
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... Is −1.1 A °C qJA R 113 qJA Device °C T 260 L NTHD2102PT1 NTHD2102PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on −4 −2.5 V −4.6 A 100 mW @ −1.8 V ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate−Body Leakage Current Zero Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain−to−Source On−Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input ...
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TYPICAL ELECTRICAL CHARACTERISTICS 10 −2.4 thru − −V , Drain−to−Source Voltage (V) DS Figure 1. On−Region Characteristics 0.30 0. −1 0.20 0.15 0.10 0. ...
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TYPICAL ELECTRICAL CHARACTERISTICS − Total Gate Charge (nC) g, Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge ...
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TYPICAL ELECTRICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 ...
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... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...