NTHD2102PT1G ON Semiconductor, NTHD2102PT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD2102PT1G
• Description: MOSFET PWR P-CH DUAL 8V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD2102PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 715pF @ 6.4V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD2102PT1GOS; NTHD2102PT1GOS; NTHD2102PT1GOSTR

5
4
3
2
1
0
0.40
4
3
2
1
0
0
V
T
GS
J
= 25°C
Q
Figure 9. Diode Forward Voltage vs. Current
1
Drain−to−Source Voltage vs. Total Charge
= 0 V
0.50
1
−V
SD
2
Figure 7. Gate−to−Source and
, Source−to−Drain Voltage (V)
0.60
Q
g,
3
Total Gate Charge (nC)
Q
0.70
T
4
−V
Q
DS
2
TYPICAL ELECTRICAL CHARACTERISTICS
5
0.80
6
I
T
D
0.90
J
= −3.4 A
−V
= 25°C
GS
7
http://onsemi.com
NTHD2102P
1.00
8
8
6
4
2
0
4
1000
100
50
40
30
20
10
10
1
0
10 −4
0
Figure 8. Resistive Switching Time Variation
V
V
GS
DD
I
D
= −1 A
= −4.5 V
10 −3
= −10 V
Figure 10. Single Pulse Power
R
10
G
vs. Gate Resistance
, Gate Resistance (Ohms)
−2
10
Time (sec)
−1
10
t
d(off)
1
t
10
d(on)
100
t
f
t
r
100
600