NTUD3170NZT5G ON Semiconductor, NTUD3170NZT5G Datasheet
NTUD3170NZT5G
Specifications of NTUD3170NZT5G
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NTUD3170NZT5G Summary of contents
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NTUD3170NZ Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1 1.0 mm SOT−963 Package Features • Dual N−Channel MOSFET • Offers a Low R Solution in the Ultra Small 1.0 x 1.0 mm DS(ON) Package • 1.5 ...
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... Turn−Off Delay Time Fall Time 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTUD3170NZT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Symbol R qJA = 25° ...
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thru 1.8 V 0.3 0.2 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics GATE−TO−SOURCE ...
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C iss 15.0 12.5 10.0 C oss 7.50 5.00 C rss 2. GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.200 V 0.175 T 0.150 0.125 0.100 0.075 0.050 0.025 0 0 Figure ...
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... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...