NTUD3170NZT5G ON Semiconductor, NTUD3170NZT5G Datasheet - Page 2

• Manufacturer Part Number: NTUD3170NZT5G
• Description: MOSFET N-CH DUAL 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3170NZT5G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.48 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

THERMAL RESISTANCE RATINGS
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
CAPACITANCES
SWITCHING CHARACTERISTICS, V
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
NTUD3170NZT5G
Specifications Brochure, BRD8011/D.
Parameter
Device
Parameter
GS
= 4.5 V (Note 4)
(T
J
= 25°C unless otherwise specified)
V
Symbol
R
V
t
(BR)DSS
t
C
C
d(OFF)
DS(ON)
GS(TH)
C
I
I
d(ON)
V
g
DSS
GSS
OSS
RSS
ISS
t
t
FS
SD
r
f
http://onsemi.com
(Pb−Free)
SOT−963
Package
V
V
V
GS
GS
GS
= 4.5 V, V
2
= 0 V, V
= 0 V, V
V
V
V
V
V
V
V
V
V
GS
f = 1.0 MHz, V
DS
V
GS
DS
GS
GS
GS
GS
GS
GS
= 4.5 V, I
= 5.0 V, I
Test Condition
Symbol
= 1.2 V, I
= 0 V, V
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
= V
= 0 V, I
DS
= 0 V, I
R
DS
V
R
DD
qJA
DS
G
DS
= 16 V
= 5 V
= 10 V, I
= 2.0 W
, I
= 15 V
GS
D
D
S
D
D
D
D
D
D
= 100 mA
= 10 mA
= 250 mA
= 250 mA
= 125 mA
GS
= 1.0 mA
= 50 mA
= 20 mA
= 10 mA
= ±5.0 V
= 0 V
D
= 200 mA,
T
T
T
J
J
J
= 25°C
= 85°C
= 25°C
1000
Max
600
8000 / Tape & Reel
Min
0.4
20
Shipping
0.75
0.48
12.5
16.5
25.5
Typ
142
1.0
1.4
1.8
2.8
0.6
3.6
2.6
80
†
±100
Max
200
100
1.0
1.5
2.0
3.0
4.5
1.0
50
°C/W
Unit
Unit
nA
nA
nA
pF
ns
W
V
V
S
V