NTUD3170NZT5G ON Semiconductor, NTUD3170NZT5G Datasheet - Page 4

• Manufacturer Part Number: NTUD3170NZT5G
• Description: MOSFET N-CH DUAL 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3170NZT5G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.48 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

20.0
17.5
15.0
12.5
10.0
7.50
5.00
2.50
GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V)
0
0
C
C
C
Figure 7. Capacitance Variation
oss
rss
iss
5
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
10
0
0
Figure 9. Diode Forward Voltage vs. Current
V
T
GS
J
= 25°C
V
= 0 V
TYPICAL CHARACTERISTICS
SD
0.2
15
, SOURCE−TO−DRAIN VOLTAGE (V)
V
T
GS
J
= 25°C
http://onsemi.com
= 0 V
0.4
20
4
1000
0.6
100
10
1
1
Figure 8. Resistive Switching Time Variation
V
I
V
D
DD
GS
= 200 mA
0.8
= 10 V
= 4.5 V
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1
10
t
t
t
t
d(off)
d(on)
f
r
100