UPA1793G-E1-AT Renesas Electronics America, UPA1793G-E1-AT Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/5/560/renesas_electronics_america_sml.jpg)
UPA1793G-E1-AT
Manufacturer Part Number
UPA1793G-E1-AT
Description
MOSFET N/P-CH 20V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet
1.UPA1793G-E1-AT.pdf
(14 pages)
Specifications of UPA1793G-E1-AT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
69 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.1nC @ 4V
Input Capacitance (ciss) @ Vds
160pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T
2
Notes 1. PW
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
2. Mounted on ceramic substrate of 5500 mm
10 s, Duty Cycle
Note1
Parameter
DS
GS
= 0 V)
= 0 V)
Note2
Note2
1%
A
= 25°C, All terminals are connected.)
DataSheet G16059EJ1V0DS
Symbol
I
V
V
I
D(pulse)
2
D(DC)
T
T
P
P
DSS
GSS
stg
ch
T
T
2.2 mm, T
N-Channel
A
20
= 25°C
12
12
3
–55 to +150
150
1.7
2.0
P-Channel
m
m
–20
m
12
12
3
Unit
°C
°C
W
W
V
V
A
A
PA1793