UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet
UPA1793G-E2-AT
Specifications of UPA1793G-E2-AT
Related parts for UPA1793G-E2-AT
UPA1793G-E2-AT Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES Low on-state resistance N-Channel MAX. (V DS(on MAX. (V ...
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ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...
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ELECTRICAL CHARACTERISTICS (T A) N-Channel Characteristice Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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B) P-Channel Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total ...
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TYPICAL CHARACTERISTICS ( N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted ...
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A) N-Channel FORWARD TRANSFER CHARACTERISTICS Pulsed 125 C ch 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V ...
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A) N-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 150 100 4 100 T - Channel Temperature - C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...
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B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 Mounted on ceram ic ...
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B) P-Channel FORWARD TRANSFER CHARACTERISTICS - Pulsed - 1 - 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...
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P-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ...
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DataSheet G16059EJ1V0DS PA1793 11 ...
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The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...