BSO207P Infineon Technologies, BSO207P Datasheet - Page 5

• Manufacturer Part Number: BSO207P
• Description: MOSFET DUAL P-CH 20V 5.7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 1.2V @ 40µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1013pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 m Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 5.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO207PINTR; BSO207PNT; BSO207PT; BSO207PT; SP000012573

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
Rev.1.2
= f (V
-14
-12
-11
-10
A
A
35
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
5
0
0
0
BSO207P
DS
GS
P
i
-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
tot
); T
); |V
= 2W
h
0.5
p
p
= 80 µs
= 80 µs
j
=25°C
DS
|≥ 2 x |I
1
1.5
D
| x R
2
DS(on)max
e
g
c
a
f
d
b
V GS [V]
V
a
b
c
d
e
f
g
h
i
V
- V
V
DS
-1.8
-1.9
-2.0
-2.1
-2.2
-2.3
-2.4
-2.5
-4.5
GS
Page 5
-5
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
mΩ
= f(I
150
120
110
100
S
90
80
70
60
50
40
30
20
10
35
25
20
15
10
0
5
0
0
0
D
BSO207P
V
= f (I
-2.0
); T
GS
c
c
[V] =
-2.1
5
-2
d
j
=25°C
D
GS
)
-2.2
e
10
-2.3
-4
f
d
-2.4
g
15
-6
-2.5
h
e
-4.5
20
i
-8
f
25
2001-11-20
BSO207P
-10
g
A
A
I
- I
h
D
D
i
-13
35