BSO207P Infineon Technologies, BSO207P Datasheet - Page 7

• Manufacturer Part Number: BSO207P
• Description: MOSFET DUAL P-CH 20V 5.7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 1.2V @ 40µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1013pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 m Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 5.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO207PINTR; BSO207PNT; BSO207PT; BSO207PT; SP000012573

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
Rev.1.2
AS
DD
(BR)DSS
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
= -10 V, R
V
45
35
30
25
20
15
10
5
0
-60
25
BSO207P
j
= f (T
), par.: I
45
-20
GS
j
)
65
20
D
= 25 Ω
= -5.7 A
85
60
105
100
125
°C
°C
T
T
j
j
Page 7
165
180
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
10
9
8
7
6
5
4
3
2
1
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
4
Gate
D
= -5.7 A pulsed
8
)
12
16
20
2001-11-20
BSO207P
24
nC
|Q Gate |
30