BSO604NS2 Infineon Technologies, BSO604NS2 Datasheet - Page 4

• Manufacturer Part Number: BSO604NS2
• Description: MOSFET N-CHAN DUAL 55V DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO604NS2

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO604NS2; BSO604NS2NT; BSO604NS2T; BSO604NS2TR; BSO604NS2XT; SP000396268

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (T
10
10
10
W
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
1
0
2
1
0
10
0
BSO604NS2
BSO604NS2
-1
DS
A
20
)
thJC
thJA
)
GS
R
R
40
6 V
10
60
0
A
= 25 °C
80
100
10
120
1
DC
°C
V
T
V
t p = 46.0µs
A
DS
100 µs
1 ms
10 ms
160
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
10
5.5
4.5
3.5
2.5
1.5
0.5
A
4
3
2
1
0
= f (t
-1
-2
-3
-4
2
1
0
0
10
BSO604NS2
A
BSO604NS2
-7
)
20
p
10
)
single pulse
GS
-6
40
10
p
10 V
/T
-5
60
10
80
-4
10
100
-3
BSO604NS2
10
120
2003-10-28
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0