BSO604NS2 Infineon Technologies, BSO604NS2 Datasheet - Page 7

• Manufacturer Part Number: BSO604NS2
• Description: MOSFET N-CHAN DUAL 55V DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO604NS2

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO604NS2; BSO604NS2NT; BSO604NS2T; BSO604NS2TR; BSO604NS2XT; SP000396268

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
V
= f (T
66
62
60
58
56
54
52
50
90
70
60
50
40
30
20
10
D
-60
0
25
BSO604NS2
= 5 A , V
= f (T
j
)
45
-20
D
=10 mA
j
65
)
DD
20
85
= 25 V, R
105
60
125
100
GS
145
= 25
°C
°C
T
T
j
j
180
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSO604NS2
Gate
4
D
= 5 A pulsed
)
8
0,2
12
V
DS max
16
BSO604NS2
0,8 V
20
2003-10-28
DS max
24
nC
Q
Gate
30