UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet - Page 8

• Manufacturer Part Number: UPA1792G-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1792G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
100
100
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
10
80
60
40
20
1
1
0.1
0
FORWARD TRANSFER CHARACTERISTICS
0.1
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= 125˚C
V
T
GS
A
75˚C
= 25˚C
-
2
Gate to Source Voltage - V
I
D
25˚C
I
- Drain Current - A
1
D
1
- Drain Current - A
125˚C
75˚C
V
3
GS
= 4.0 V
25˚C
25˚C
10
10
V
Pulsed
4
DS
V
DS
Pulsed
Pulsed
= 10 V
4.5 V
= 10 V
10 V
100
100
5
Data Sheet G14557EJ3V0DS
100
3.0
2.0
1.0
35
30
25
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
90
80
70
60
50
40
30
20
10
5
0
0
0
0
Pulsed
V
50
GS
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
T
= 10 V
DS
GS
ch
0.4
- Drain to Source Voltage - V
- Channel Temperature - ˚C
- Gate to Source Voltage - V
0
5
I
D
= 4.0 A
6.8 A
50
0.8
100
10
4.5 V
V
I
4.0 V
1.2
D
DS
= 1 mA
= 10 V
150
Pulsed
PA1792
1.6
15