UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet - Page 9

• Manufacturer Part Number: UPA1792G-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1792G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
1000
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
50
40
30
20
10
10
10
1
0.1
0.1
Pulsed
50
V
T
DS
ch
- Drain to Source Voltage - V
- Channel Temperature - ˚C
I
D
0
V
1
1
- Drain Current - A
GS
= 4.5 V
50
di/dt = 100 A/ s
V
10
10
10 V
100
GS
= 0 V
V
f = 1 MHz
GS
C
C
150
C
= 0 V
oss
rss
iss
100
100
Data Sheet G14557EJ3V0DS
1000
100
100
0.1
40
35
30
25
20
15
10
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
5
0
1
0.1
0
0
V
0.2
SWITCHING CHARACTERISTICS
DD
V
5
SD
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= 24 V
V
V
- Source to Drain Voltage - V
15 V
DS
0.4
Q
6 V
GS
I
D
G
10
= 10 V
1
- Drain Current - A
- Gate Charge - nC
0.6
15
0.8
V
1.0
10
20
GS
t
0 V
d(on)
V
V
R
I
D
t
t
DD
GS
G
t
1.2
f
d(off)
r
= 6.8 A
= 10
= 15 V
= 10 V
25
Pulsed
1.4
PA1792
100
30
16
14
12
10
8
6
4
2
0
7