NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 2

• Manufacturer Part Number: NTMD6601NR2G
• Description: MOSFET N-CH 80V 1.1A 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6601NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
BODY - DRAIN DIODE RATINGS (Note 3)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain-to-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
t
t
(BR)DSS
C
C
t
t
d(OFF)
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
d(ON)
d(ON)
Q
DS(on)
V
G(TH)
DSS
GSS
t
T
OSS
RSS
RR
T
ISS
GD
t
t
t
t
SD
GS
RR
r
r
f
f
a
b
/T
/T
NTMD6601NR2G
J
J
http://onsemi.com
V
V
V
GS
GS
GS
V
V
V
V
V
V
I
GS
GS
= 0 V, f = 1.0 MHz, V
= 5.0 V, V
DS
GS
D
GS
= 10 V, V
V
V
GS
V
V
V
GS
I
GS
= 1.0 A
I
2
DS
GS
D
D
GS
= 5.0 V
= 0 V, d
= 80 V
= 10 V
= 0 V,
= 0 V
= 1.0 A, R
= 2.5 A, R
Test Condition
= 4.5 V, V
= 10 V, V
= 0 V, V
= V
= 0 V, I
I
S
DS
DS
DS
= 1.0 A
IS
, I
/d
= 40 V, I
= 40 V, I
D
GS
D
DD
t
G
G
= 250 mA
DD
= 250 mA
= 100 A/ms,
= 47 W
= ±15 V
= 27 W
= 40 V,
T
T
= 40 V,
T
T
I
I
J
D
D
J
J
J
DS
= 125°C
D
= 150°C
= 2.2 A
= 1.0 A
D
= 25°C
= 25°C
= 1.0 A
= 1.0 A
= 25 V
Min
1.0
80
99.8
2.75
Typ
190
215
220
105
1.9
4.6
5.0
0.4
1.0
9.0
0.8
0.6
55
16
21
62
52
50
15
95
50
44
21
23
43
±100
Max
215
245
400
100
105
1.0
3.0
9.0
1.0
25
30
15
35
85
85
86
mV/°C
mV/°C
Unit
mW
nA
nC
nC
nC
mA
pF
ns
ns
ns
V
V
V